Login       My Wishlist
  My Cart
$0.00 / 0 items
 
Buditech
We Get Electrical Work Done
 
International Access
Global Shipping Options Available
  Our Catalog   Semiconductor Products   Transistors   IGBT Transistors

IGBT Transistors - 181 - Huge Savings! Save up to 15%


Huge Savings! Up to 15% off on IGBT Transistors at Buditech. Top brands include Hilitand, NTE Electronics, PRX, STMicroelectronics, Infineon Technologies, S.U.R. & R Tools, Sruik Tool, Russia, SICSTOCK, Fairchild Semiconductor, & Aexit. Hurry! Limited time offers. Offers valid only while supplies last.



960pcs Three Pin Transistors 24 Values BC327-S9015 PNP Silicon Transistors Assortment Set
960pcs Three Pin Transistors 24 Values BC327-S9015 PNP Silicon Transistors Assortment Set
By Hilitand
In Stock
$18.99

mpn: Hilitandxgh3dzvgf4, ean: 0798382602836,

Features: Transistors are basic semiconductor device that control current, which can also be used as a non-contact switch. There are total 960 pieces of transistors in 24 values in this set which will meet you basic needs. All transistors are well pa...


NTE Electronics NTE3322 N-Channel Enhancement Mode Insulated Gate Bipolar Transistor for High Speed Switch, TO3P Type Package, 900V, 60A
NTE Electronics NTE3322 N-Channel Enhancement Mode Insulated Gate Bipolar Transistor for High Speed Switch, TO3P Type Package, 900V, 60A
By NTE Electronics
In Stock
$33.49
$29.12
You Save: 13%

mpn: NTE3322, ean: 0768249484219,

4.6 out of 5 stars with 33 reviews
NTE Electronics NTE3322 N-Channel Enhancement Mode Insulated Gate Bipolar Transistor for High Speed Switch, TO3P Type Package, 900V, 60A.Enhancement Mode Type. FRD Included Between Emitter and Collector. High Speed. Low Saturation Voltage. ...


POWEREX CM75DU-12F IGBT MODULE, 600V, 75A
POWEREX CM75DU-12F IGBT MODULE, 600V, 75A
By PRX
In Stock
$75.00

mpn: CM75DU-12F,

Prx Igbt Module CM75DU-12F, 75A, 600V...


(PG #28) 2pcs STMicroelectronics IGBT 1200V 60A 220W TO247 STGW30NC120HD
(PG #28) 2pcs STMicroelectronics IGBT 1200V 60A 220W TO247 STGW30NC120HD
By STMicroelectronics
In Stock
$10.85

mpn: IGBT160906, ean: 0616880101364,

ST Microelectronics IGBT GW30NC120HD Package of 2 pieces Voltage - Collector Emitter Breakdown (Max) 1200V Current - Collector (Ic) (Max) 60A Current - Collector Pulsed (Icm) Vce(on) (Max) @ Vge, Ic 2.75V @ 15V, 20A Power - Max 220W Switching Energy:...


Igbt Transistors Igbt Products
Igbt Transistors Igbt Products
By Infineon Technologies
In Stock
$41.89

mpn: IHW30N135R3FKSA1,

Infineon Technologies IHW30N135R3FKSA1 - Igbt Transistors Igbt ProductsProducts. Igbt. Transistors. IHW30N135R3FKSA1. Technologies. ...


MP14 germanium transistor USSR 30 pcs
MP14 germanium transistor USSR 30 pcs
By S.U.R. & R Tools
In Stock
$13.50

ean: 4652959101022,

Transistors MP14 germanium alloy p-n-p universal low-frequency low-power. Designed to amplify small signals of low frequency, amplification, switching, pulse formation, application in ferrittransistor cells. MP14: • Structure of the transistor: p-n...


Sruik Tool 5 Pcs IXSK35N120AU1 Encapsulation TO-264 High Voltage IGBT With Diode
Sruik Tool 5 Pcs IXSK35N120AU1 Encapsulation TO-264 High Voltage IGBT With Diode
By Sruik Tool
In Stock
$25.99

ean: 0721352290610,

Sruik Tool 5 Pcs IXSK35N120AU1 Encapsulation TO-264 High Voltage IGBT With Diode...


KT201G transistor silicon N-P-N GOLD USSR 4 pcs
KT201G transistor silicon N-P-N GOLD USSR 4 pcs
By Russia
In Stock
$13.50

ean: 4675899701794,

KT201G Transistors silicon epitaxial-planar structures n-p-n amplifying with non-standardized KT201G noise factor at a frequency of 1 kHz. Designed for use in low-frequency amplifiers. KT201G: • Structure of the transistor: n-p-n • Рк max - Con...


KT3123VM transistor silicon USSR 6 pcs
KT3123VM transistor silicon USSR 6 pcs
By Russia
In Stock
$13.50

ean: 4681020798793,

KT3123VM Transistors silicon epitaxial-planar structures p-n-p amplifying with a normalized noise factor. Designed for use in amplifiers and pulse devices in sealed equipment. KT3123VM: • Structure of the transistor: p-n-p • Рк max - Constant d...


KT201DM transistor silicon N-P-N USSR 30 pcs
KT201DM transistor silicon N-P-N USSR 30 pcs
By Russia
In Stock
$13.50

ean: 4675899791795,

KT201DM Transistors silicon epitaxial-planar structures n-p-n amplifying with non-standardized KT201DM noise factor at a frequency of 1 kHz. Designed for use in low-frequency amplifiers. KT201DM: • Structure of the transistor: n-p-n • Рк max - ...


Transistors KT3109B USSR 50 pcs
Transistors KT3109B USSR 50 pcs
By Russia
In Stock
$13.50

ean: 4681899798795,

KT3109B Transistors silicon epitaxial-planar structures p-n-p amplifying with a normalized noise factor at a frequency of 800 MHz. Designed for use in selectors of television channels of meter and decimeter wavelengths. KT3109B: • Structure of the ...


Transistor silicone KT814A analoge BD814, TIP30, TIP62 USSR 30 pcs
Transistor silicone KT814A analoge BD814, TIP30, TIP62 USSR 30 pcs
By Russia
In Stock
$13.50

ean: 4675895489726,

Transistors KT814A silicon mesaepitaxial-planar structures p-n-p amplifying. KT814A: • Structure of the transistor: p-n-p; • Рк т max - Constant dissipated collector power with heatsink: 10 W; • fgr - Boundary frequency of the transistor cur...


(5PCS) IXGQ85N33PCD1 IGBT W/FAST REC DIODE TO-3P 85N33 IXGQ85N33
(5PCS) IXGQ85N33PCD1 IGBT W/FAST REC DIODE TO-3P 85N33 IXGQ85N33
By SICSTOCK
In Stock
$26.00

mpn: IXGQ85N33PCD1, ean: 0330057952381,

Part NO.:IXGQ85N33PCD1Package:TO-3PDescription:IGBT W/FAST REC DIODE TO-3PSupplier:SICSTOCKIGBT Type:-Voltage - Collector Emitter Breakdown (Max):330VVce(on) (Max) @ Vge, Ic:2.1V @ 15V, 50ACurrent - Collector (Ic) (Max):85ACurrent - Collector Pulsed ...


Transistor silicone KT819BM analoge 2N6253, 2N6371, 2N6470, BD142 USSR 6 pcs
Transistor silicone KT819BM analoge 2N6253, 2N6371, 2N6470, BD142 USSR 6 pcs
By Russia
In Stock
$19.50
$16.50
You Save: 15%

ean: 4678596985474,

4.5 out of 5 stars with 15 reviews
KT819BM Transistors silicon mesaepitaxial-planar structures n-p-n switching. KT819BM: • Structure of the transistor: n-p-n; • Рк max - Constantly dissipated collector power: 2 W; • Рк т max - Constant dissipated collector power with heat s...


Transistor silicone KT829B analoge BD263, BD265, BD267, BD333 USSR 10 pcs
Transistor silicone KT829B analoge BD263, BD265, BD267, BD333 USSR 10 pcs
By Russia
In Stock
$13.50

ean: 4670596985478,

Transistors KT829B silicon mesaplanar structures n-p-n compound amplifying. KT829B: • Structure of the transistor: n-p-n; • Рк т max - Permanent dissipated collector power with heat sink: 60 W; • fgr - Boundary frequency of the transistor cu...


KT991AS transistor silicon 350 ... 700 MHz USSR 1 pcs
KT991AS transistor silicon 350 ... 700 MHz USSR 1 pcs
By Russia
In Stock
$14.50

ean: 4687105102103,

Assemblies of KT991AS from two silicon epitaxial-planar structures of n-p-n generator transistors. Designed for use in two-stroke broadband power amplifiers in a circuit with a common base in the frequency band 350 ... 700 MHz at a supply voltage of ...


KT984B transistor silicon 720 ... 820 MHz USSR 1 pcs
KT984B transistor silicon 720 ... 820 MHz USSR 1 pcs
By Russia
In Stock
$13.50

ean: 4687101102107,

Transistors KT984B silicon epitaxial-planar structures n-p-n generator. Designed for use in Class C pulse power amplifiers in a circuit with a common base in the frequency range 720 ... 820 MHz at a supply voltage of 50 V. KT984B: • Structure of th...


Igbt Transistors Igbt Power Bipolar
Igbt Transistors Igbt Power Bipolar
By STMicroelectronics
In Stock
$51.22

mpn: STGFW20H65FB,

STMicroelectronics STGFW20H65FB - Igbt Transistors Igbt Power BipolarBipolar. Power. Igbt. Transistors. STGFW20H65FB. ...


IGBT Transistors 600V N-Channel IGBT SMPS Series (5 pieces)
IGBT Transistors 600V N-Channel IGBT SMPS Series (5 pieces)
By Fairchild Semiconductor
In Stock
$28.38

mpn: HGTG20N60A4,



Aexit IRG4PF50WD 51A Interfaces 900V Insulated Gate Radio Frequency Transceivers Transistor IGBT
Aexit IRG4PF50WD 51A Interfaces 900V Insulated Gate Radio Frequency Transceivers Transistor IGBT
By Aexit
In Stock
$13.80

mpn: _,

Optimized for use in welding and switching-mode power supply applications. Low IGBT conduction losses, TO-247AC package.Product Name : Insulated Gate Transistor;Model No. : IRG4PF50WD. Collector Current : 51A;Collector-Emitter Voltage : 900V. Pin Len...



Viewing Page 1 of 5

View more products in Transistors.
Feel free to Browse Our Catalog.



Privacy Policy / Terms of Service
© 2018 - buditech.com. All Rights Reserved.