IGBT Transistors - 181 - Huge Savings! Save up to 15%
Huge Savings! Up to 15% off on IGBT Transistors at Buditech. Top brands include Hilitand, NTE Electronics, PRX, STMicroelectronics, Infineon Technologies, S.U.R. & R Tools, Sruik Tool, Russia, SICSTOCK, Fairchild Semiconductor, & Aexit. Hurry! Limited time offers. Offers valid only while supplies last.
(PG #28) 2pcs STMicroelectronics IGBT 1200V 60A 220W TO247 STGW30NC120HD
mpn: IGBT160906, ean: 0616880101364,
ST Microelectronics IGBT GW30NC120HD Package of 2 pieces Voltage - Collector Emitter Breakdown (Max) 1200V Current - Collector (Ic) (Max) 60A Current - Collector Pulsed (Icm) Vce(on) (Max) @ Vge, Ic 2.75V @ 15V, 20A Power - Max 220W Switching Energy:...
Igbt Transistors Igbt Products
Infineon Technologies IHW30N135R3FKSA1 - Igbt Transistors Igbt ProductsProducts. Igbt. Transistors. IHW30N135R3FKSA1. Technologies. ...
MP14 germanium transistor USSR 30 pcs
Transistors MP14 germanium alloy p-n-p universal low-frequency low-power. Designed to amplify small signals of low frequency, amplification, switching, pulse formation, application in ferrittransistor cells. MP14: • Structure of the transistor: p-n...
KT201G transistor silicon N-P-N GOLD USSR 4 pcs
KT201G Transistors silicon epitaxial-planar structures n-p-n amplifying with non-standardized KT201G noise factor at a frequency of 1 kHz. Designed for use in low-frequency amplifiers. KT201G: • Structure of the transistor: n-p-n • Рк max - Con...
KT3123VM transistor silicon USSR 6 pcs
KT3123VM Transistors silicon epitaxial-planar structures p-n-p amplifying with a normalized noise factor. Designed for use in amplifiers and pulse devices in sealed equipment. KT3123VM: • Structure of the transistor: p-n-p • Рк max - Constant d...
KT201DM transistor silicon N-P-N USSR 30 pcs
KT201DM Transistors silicon epitaxial-planar structures n-p-n amplifying with non-standardized KT201DM noise factor at a frequency of 1 kHz. Designed for use in low-frequency amplifiers. KT201DM: • Structure of the transistor: n-p-n • Рк max - ...
Transistors KT3109B USSR 50 pcs
KT3109B Transistors silicon epitaxial-planar structures p-n-p amplifying with a normalized noise factor at a frequency of 800 MHz. Designed for use in selectors of television channels of meter and decimeter wavelengths. KT3109B: • Structure of the ...
(5PCS) IXGQ85N33PCD1 IGBT W/FAST REC DIODE TO-3P 85N33 IXGQ85N33
mpn: IXGQ85N33PCD1, ean: 0330057952381,
Part NO.:IXGQ85N33PCD1Package:TO-3PDescription:IGBT W/FAST REC DIODE TO-3PSupplier:SICSTOCKIGBT Type:-Voltage - Collector Emitter Breakdown (Max):330VVce(on) (Max) @ Vge, Ic:2.1V @ 15V, 50ACurrent - Collector (Ic) (Max):85ACurrent - Collector Pulsed ...
Transistor silicone KT819BM analoge 2N6253, 2N6371, 2N6470, BD142 USSR 6 pcs
You Save: 15%
4.5 out of 5 stars with 15 reviews
KT819BM Transistors silicon mesaepitaxial-planar structures n-p-n switching. KT819BM: • Structure of the transistor: n-p-n; • Рк max - Constantly dissipated collector power: 2 W; • Рк т max - Constant dissipated collector power with heat s...
KT991AS transistor silicon 350 ... 700 MHz USSR 1 pcs
Assemblies of KT991AS from two silicon epitaxial-planar structures of n-p-n generator transistors. Designed for use in two-stroke broadband power amplifiers in a circuit with a common base in the frequency band 350 ... 700 MHz at a supply voltage of ...
KT984B transistor silicon 720 ... 820 MHz USSR 1 pcs
Transistors KT984B silicon epitaxial-planar structures n-p-n generator. Designed for use in Class C pulse power amplifiers in a circuit with a common base in the frequency range 720 ... 820 MHz at a supply voltage of 50 V. KT984B: • Structure of th...
Browse Our Catalog