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NTE Electronics NTE3322 N-Channel Enhancement Mode Insulated Gate Bipolar Transistor for High Speed Switch, TO3P Type Package, 900V, 60A


Huge Savings Item! Save 14% on the NTE Electronics NTE3322 N-Channel Enhancement Mode Insulated Gate Bipolar Transistor for High Speed Switch, TO3P Type Package, 900V, 60A by NTE Electronics at Buditech. MPN: NTE3322. Hurry! Limited time offer. Offer valid only while supplies last. NTE Electronics NTE3322 N-Channel Enhancement Mode Insulated Gate Bipolar Transistor for High Speed Switch, TO3P Type Package, 900V,


Product Description

NTE Electronics NTE3322 N-Channel Enhancement Mode Insulated Gate Bipolar Transistor for High Speed Switch, TO3P Type Package, 900V, 60A.

Features & Highlights

  • Enhancement Mode Type
  • FRD Included Between Emitter and Collector
  • High Speed
  • Low Saturation Voltage

Additional Information

Manufacturer:NTE Electronics, Inc.
Brand:NTE Electronics
Model:NTE3322
Part Number:NTE3322
Publisher:NTE Electronics, Inc.
Studio:NTE Electronics, Inc.
MPN:NTE3322
UPC:768249484219
EAN:0768249484219
Package Weight:3 pounds
Package Size:5 x 5 x 5 inches

NTE Electronics NTE3322 N-Channel Enhancement Mode Insulated Gate Bipolar Transistor for High Speed Switch, TO3P Type Package, 900V, 60A by NTE Electronics

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NTE Electronics NTE3322 N-Channel Enhancement Mode Insulated Gate Bipolar Transistor for High Speed Switch, TO3P Type Package, 900V, 60A

Brand: NTE Electronics
4.6 out of 5 stars with 33 reviews
Condition: New
Lead Time: 1 - 2 Business Days
Availability: In Stock
$33.49
$29.12
You Save: 13%


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